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Sapphire Wafer SPEC
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Sapphire Wafer SPEC
Sapphire Wafer ¶õ?
Al2O3°¡ 2300µµ À̻󿡼 ´Ü°áÁ¤À¸·Î ¼ºÀåµÈ °áÁ¤Ã¼¸¦ Sapphire¶ó°í ÇÕ´Ï´Ù.
Sapphire Ư¼º
1. Àú¿Â ¹× °í¿Â ¾ÈÁ¤¼º - ±ØÀú¿Â¿¡¼ Ãʰí¿Â±îÁö »óº¯Å¾øÀÌ ¸Å¿ì ¾ÈÁ¤ÀûÀÌ´Ù.
2. ¿ì¼öÇÑ ±â°èÀû ¼ºÁú (Knoop 2000), °æµµ°¡ Mohs9 ·Î½á ´ÙÀ̾Ƹóµå ´ÙÀ½À¸·Î ³ô´Ù.»ê°ú ¾ËÄ«¸®¿¡ »ó´çÈ÷ °ÇÔ.
3. ¶Ù¾î³ ±¤ÇÐÆ¯¼º -ºûÀÇ Åõ°ú¼ºÀÌ °¡Àå ¶Ù¾î³ Àç·á, Index of refraction : 1.769
4. ¿ì¼öÇÑ ¿Àü´Þ Ư¼º - ¼¼¶ó¹Í Àç·áÁß¿¡¼ ±Ý¼Ó°ú ¸Â¸Ô´Â ¿Àüµµµµ¸¦ °¡Áü - ¿Àüµµµµ : 20-25w/m/k - Dielectric constant : 7.5 to 13 - Electrical resistance 10©ö©ùohm/cm at 500C
Ư ¼º Ç¥ Chemical Formula Al2O3 Crystal Class Trigonal Molecular Weight 101.94 Density ( g/cm8)(20µµ) 3.98 Reflection Loss, % for two surface at 4um 12 Dielectric Constant for 102-108Hz at 298 Parallel Perpendicular 10.55 8.6 Melting Temperature 2300 Thermal Conductivity,W/(mk) at 300K Parallel Perpendicular 35.1 33.0 Thermal Expansion,1/K at 293K Parallel Perpendicular 5.6X10-6 5.0X10-6 Dielectric Constant at 1Mhz Parallel Perpendicular 11.5 9.4 Bandgap,ev 9.9 Solubility in water None Knoop Hardness,kg/mm2 1370 Young's Modulus,GPa 335 Shear Modulus,GPa 148 Bulk Modulus,GPa at 273 K 240 Apparent Elastic Limit,MPa 275 Poisson's Ratio 0.25
Orientation
1. Orientations
Sapphire ´Â Hexagon/rhombohedral ±¸Á¶·Î ¸¹Àº Ư¼ºÀÌ °áÁ¤ÀÇ ¹æÇâ¿¡ µû¶ó °áÁ¤ÀÌ µÈ´Ù. Epi growth ¿¡ ´ëÇØ¼´Â, ´Ù¸¥ °áÁ¤ ¹æÇâÀº epi ¹°Áú°ú ÀÏÄ¡ÇÏ´Â °ÝÀÚ»ó¼öÀÇ ¹üÀ§¸¦ °¡Á®¾ß ÇÑ´Ù.
2. Substrates
C-plane sapphire ±âÆÇÀº Blue LED ¿¡ »ç¿ëµÇ´Â GaN °ú °°Àº 3-5Á·°ú 2-4Á·¿¡ »ç¿ëµÇ¾îÁø´Ù. ´õ¿íÀÌ, C-plane Àº infrared detector ÀÇ Àû¿ëºÐÀ¯¿¡ À¯¿ëÇÏ´Ù.
A-plane ±âÆÇÀº ÀÏÁ¤ÇÑ À¯ÀüÀ²À» °¡Áö°í, hybrid microelectronic application ¿¡ »ç¿ëµÇ¾îÁö´Â ³ôÀº Àý¿¬¼ºÀ» ¶ÇÇÑ °¡Áø´Ù. High Tc superconductors Àº ÀÌ ±âÆÇÀ» »ç¿ëÇÏ¿©¼ ¸¸µé¾îÁú ¼ö°¡ ÀÖ´Ù.
R-plane ±âÆÇÀº microelectronic IC ¿¡ »ç¿ëÀ» À§Çؼ ½Ç¸®ÄÜÀÇ Hetero-epitaxial ÁõÂø¿¡ »ç¿ëµÇ¾îÁø´Ù. Sapphire ´Â ³ôÀº À¯ÀüÀ² ¶§¹®¿¡ microwave IC ¿Í °°Àº hybrid ±âÆÇ¿¡ »ç¿ëÀÌ Àû´çÇÏ´Ù. °Ô´Ù°¡, epitaxial ½Ç¸®ÄÜ °úÁ¤¿¡ Çʸ§À» ¹Ù¸¦ ¶§, ºü¸¥ ¼ÓµµÀÇ IC ¿Í pressure transducers ÀÌ ¸¸µé¾î Áú ¼ö ÀÖ´Ù. Thallium ¼ºÀå½Ã, ´Ù¸¥ superconducting components, high impedance resistors, and GaAs ÀÌ Àû¿ëµÉ ¼ö ÀÖ´Ù.
3. Application - GaN, 3-5 Á·, 2-4Á· Compounds - IR Detectors - High Tesuperconductors and High Frequency Dielectrics. High speed IC's and Pressure Transducers GaAs wafer carriers SOS (Silicon On Sapphire) Orientation : A-Plane(1120), C-Plane(0001), R-Plane(1012) ¶Ç´Â Size up to 4" diameter. |

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´ç»ç¿¡¼´Â Polished Sapphire Wafer¿¡ ´ëÇØ¼ ´ÙÀ½ÀÇ SpecÀÌ °ø±Þ °¡´ÉÇÕ´Ï´Ù.
Specification of polished Sapphire Wafer Type: polished Monocrystalline, SEMI M3-91 Material: Kyropolos high-purity monocrystalline AI2O3 Orientation: C-, A-, R- Plane ¡¾ 0.25 degree, ¡¾ 0.10 degree on request Diameter: 2 inch - 6 inch ¡¾ 0.50 mm, C-Plane: 2 inch - 5 inch Physical parameters: Thickness, Center Point: SEMI or on request > 0.25 mm Toatal Thickness Varaiation TTV: < 10 microns; typical, other on request Bow: < 15 microns; typical for 2 inch Taper: < 15 microns; typical for 2 inch Primary Flat: SEMI standard, or on request Orientation: according to SEMI standard ¡¾ 0.5 deg. Front surface finish: Particles: < 10 @ 0.3 microns Roughness (Ra): < 1.0 nm; typical, others on request Surface quality: Epitaxial polishing (MIL 20-10) Back surface: Surface quality: Fine grinding Package: 25 wafers, EMPAK Ultrapack cassette, double bagged
Specification of Ground Sapphire Wafer Type: Ground finish Material: Kyropolos high-purity monocrystalline AI2O3 Orientation: C-, A-, R- Plane ¡¾ 0.25 degree, ¡¾ 0.10 degree on request Diameter: 2 inch - 6 inch ¡¾ 0.50 mm, C-Plane: 2 inch - 5 inch Physical parameters: Thickness, Center Point: SEMI or on request > 0.15 mm Toatal Thickness Varaiation TTV: < 20 microns; typical, other on request Bow: < 20 microns; typical for 2 inch Taper: < 20 microns; typical for 2 inch Primary Flat: SEMI standard, or on request Orientation: according to SEMI standard ¡¾ 0.5 deg. Front surface finish: Roughness (Ra): 0.8 - 1.2 microns Surface quality: ground, ready for polish Back surface: Roughness (Ra): 0.8 - 1.2 microns Surface quality: ground, ready for polish Package: to prevent breakage |
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