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Sapphire Wafer SPEC
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Sapphire Wafer SPEC

Sapphire Wafer ¶õ?

Al2O3°¡ 2300µµ À̻󿡼­ ´Ü°áÁ¤À¸·Î ¼ºÀåµÈ °áÁ¤Ã¼¸¦ Sapphire¶ó°í ÇÕ´Ï´Ù.


Sapphire Ư¼º

1. Àú¿Â ¹× °í¿Â ¾ÈÁ¤¼º
- ±ØÀú¿Â¿¡¼­ Ãʰí¿Â±îÁö »óº¯Å¾øÀÌ ¸Å¿ì ¾ÈÁ¤ÀûÀÌ´Ù.

2. ¿ì¼öÇÑ ±â°èÀû ¼ºÁú (Knoop 2000), °æµµ°¡ Mohs9 ·Î½á ´ÙÀ̾Ƹóµå ´ÙÀ½À¸·Î ³ô´Ù.»ê°ú ¾ËÄ«¸®¿¡ »ó´çÈ÷ °­ÇÔ.

3. ¶Ù¾î³­ ±¤ÇÐÆ¯¼º
-ºûÀÇ Åõ°ú¼ºÀÌ °¡Àå ¶Ù¾î³­ Àç·á, Index of refraction : 1.769

4. ¿ì¼öÇÑ ¿­Àü´Þ Ư¼º
- ¼¼¶ó¹Í Àç·áÁß¿¡¼­ ±Ý¼Ó°ú ¸Â¸Ô´Â ¿­Àüµµµµ¸¦ °¡Áü
- ¿­Àüµµµµ : 20-25w/m/k
- Dielectric constant : 7.5 to 13
- Electrical resistance 10©ö©ùohm/cm at 500C


Ư ¼º Ç¥
Chemical Formula Al2O3
Crystal Class Trigonal
Molecular Weight 101.94
Density ( g/cm8)(20µµ) 3.98
Reflection Loss, % for two surface at 4um 12
Dielectric Constant for 102-108Hz at 298
Parallel
Perpendicular
10.55
8.6
Melting Temperature 2300
Thermal Conductivity,W/(mk) at 300K
Parallel
Perpendicular
35.1
33.0
Thermal Expansion,1/K at 293K
Parallel
Perpendicular
5.6X10-6
5.0X10-6
Dielectric Constant at 1Mhz
Parallel
Perpendicular
11.5
9.4
Bandgap,ev 9.9
Solubility in water None
Knoop Hardness,kg/mm2 1370
Young's Modulus,GPa 335
Shear Modulus,GPa 148
Bulk Modulus,GPa at 273 K 240
Apparent Elastic Limit,MPa 275
Poisson's Ratio 0.25


Orientation


1. Orientations

Sapphire ´Â Hexagon/rhombohedral ±¸Á¶·Î ¸¹Àº Ư¼ºÀÌ °áÁ¤ÀÇ ¹æÇâ¿¡ µû¶ó °áÁ¤ÀÌ µÈ´Ù. Epi growth ¿¡ ´ëÇØ¼­´Â, ´Ù¸¥ °áÁ¤ ¹æÇâÀº epi ¹°Áú°ú ÀÏÄ¡ÇÏ´Â °ÝÀÚ»ó¼öÀÇ ¹üÀ§¸¦ °¡Á®¾ß ÇÑ´Ù.


2. Substrates

C-plane sapphire ±âÆÇÀº Blue LED ¿¡ »ç¿ëµÇ´Â GaN °ú °°Àº 3-5Á·°ú 2-4Á·¿¡ »ç¿ëµÇ¾îÁø´Ù. ´õ¿íÀÌ, C-plane Àº infrared detector ÀÇ Àû¿ëºÐÀ¯¿¡ À¯¿ëÇÏ´Ù.

A-plane ±âÆÇÀº ÀÏÁ¤ÇÑ À¯ÀüÀ²À» °¡Áö°í, hybrid microelectronic application ¿¡ »ç¿ëµÇ¾îÁö´Â ³ôÀº Àý¿¬¼ºÀ» ¶ÇÇÑ °¡Áø´Ù. High Tc superconductors Àº ÀÌ ±âÆÇÀ» »ç¿ëÇÏ¿©¼­ ¸¸µé¾îÁú ¼ö°¡ ÀÖ´Ù.

R-plane ±âÆÇÀº microelectronic IC ¿¡ »ç¿ëÀ» À§Çؼ­ ½Ç¸®ÄÜÀÇ Hetero-epitaxial ÁõÂø¿¡ »ç¿ëµÇ¾îÁø´Ù. Sapphire ´Â ³ôÀº À¯ÀüÀ² ¶§¹®¿¡ microwave IC ¿Í °°Àº hybrid ±âÆÇ¿¡ »ç¿ëÀÌ Àû´çÇÏ´Ù. °Ô´Ù°¡, epitaxial ½Ç¸®ÄÜ °úÁ¤¿¡ Çʸ§À» ¹Ù¸¦ ¶§, ºü¸¥ ¼ÓµµÀÇ IC ¿Í pressure transducers ÀÌ ¸¸µé¾î Áú ¼ö ÀÖ´Ù. Thallium ¼ºÀå½Ã, ´Ù¸¥ superconducting components, high impedance resistors, and GaAs ÀÌ Àû¿ëµÉ ¼ö ÀÖ´Ù.


3. Application
- GaN, 3-5 Á·, 2-4Á· Compounds
- IR Detectors
- High Tesuperconductors and High Frequency Dielectrics.
High speed IC's and Pressure Transducers
GaAs wafer carriers
SOS (Silicon On Sapphire)
Orientation : A-Plane(1120), C-Plane(0001), R-Plane(1012) ¶Ç´Â Size up to 4" diameter.



¸ðµ¨ No.

´ç»ç¿¡¼­´Â Polished Sapphire Wafer¿¡ ´ëÇØ¼­ ´ÙÀ½ÀÇ SpecÀÌ °ø±Þ °¡´ÉÇÕ´Ï´Ù.


Specification of polished Sapphire Wafer
Type: polished Monocrystalline, SEMI M3-91
Material: Kyropolos high-purity monocrystalline AI2O3
Orientation: C-, A-, R- Plane ¡¾ 0.25 degree, ¡¾ 0.10 degree on request
Diameter: 2 inch - 6 inch ¡¾ 0.50 mm, C-Plane: 2 inch - 5 inch
Physical parameters:
Thickness, Center Point: SEMI or on request > 0.25 mm
Toatal Thickness Varaiation TTV: < 10 microns; typical, other on request
Bow: < 15 microns; typical for 2 inch
Taper: < 15 microns; typical for 2 inch
Primary Flat: SEMI standard, or on request
Orientation: according to SEMI standard ¡¾ 0.5 deg.
Front surface finish:
Particles: < 10 @ 0.3 microns
Roughness (Ra): < 1.0 nm; typical, others on request
Surface quality: Epitaxial polishing (MIL 20-10)
Back surface:
Surface quality: Fine grinding
Package: 25 wafers, EMPAK Ultrapack cassette, double bagged


Specification of Ground Sapphire Wafer
Type: Ground finish
Material: Kyropolos high-purity monocrystalline AI2O3
Orientation: C-, A-, R- Plane ¡¾ 0.25 degree, ¡¾ 0.10 degree on request
Diameter: 2 inch - 6 inch ¡¾ 0.50 mm, C-Plane: 2 inch - 5 inch
Physical parameters:
Thickness, Center Point: SEMI or on request > 0.15 mm
Toatal Thickness Varaiation TTV: < 20 microns; typical, other on request
Bow: < 20 microns; typical for 2 inch
Taper: < 20 microns; typical for 2 inch
Primary Flat: SEMI standard, or on request
Orientation: according to SEMI standard ¡¾ 0.5 deg.
Front surface finish:
Roughness (Ra): 0.8 - 1.2 microns
Surface quality: ground, ready for polish
Back surface:
Roughness (Ra): 0.8 - 1.2 microns
Surface quality: ground, ready for polish
Package: to prevent breakage



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